- 您现在的位置：买卖IC网 > Sheet目录333 > IRS2332DSPBF (International Rectifier)IC BRIDGE DVR 3PH 600V 28-SOIC
IRS233(0,2)(D)(S&J)PbF
Figure 15: IRS233(0,2)(D) input filter characteristic
Figure 16: Difference between the input pulse and the output pulse
Integrated Bootstrap Functionality
The new IRS233(0,2)D family features integrated high-voltage bootstrap MOSFETs that eliminate the need of the external
bootstrap diodes and resistors in many applications.
There is one bootstrap MOSFET for each high-side output channel and it is connected between the V CC supply and its
respective floating supply (i.e., V B1 , V B2 , V B3 ); see Figure 17 for an illustration of this internal connection.
The integrated bootstrap MOSFET is turned on only during the time when LO is ‘high’, and it has a limited source current due
to R BS . The V BS voltage will be charged each cycle depending on the on-time of LO and the value of the C BS capacitor, the
drain-source (collector-emitter) drop of the external IGBT (or MOSFET), and the low-side free-wheeling diode drop.
The bootstrap MOSFET of each channel follows the state of the respective low-side output stage (i.e., the bootstrap MOSFET
is ON when LO is high, it is OFF when LO is low), unless the V B voltage is higher than approximately 110% of V CC . In that
case, the bootstrap MOSFET is designed to remain off until V B returns below that threshold; this concept is illustrated in Figure
18.
www.irf.com
17
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRS2334SPBF
IC MOSFET DRIVER
IRS2453DPBF
IC DRIVER FULL SELF OSC 14-DIP
IRS25091SPBF
IC MOSFET DRIVER
IRS2509SPBF
IC MOSFET DRIVER
IRS26072DSPBF
IC DVR HI/LOW SIDE 600V 8-SOIC
IRS2607DSTRPBF
IC DVR MOSFET/IGBT N-CH 8-SOIC
IRS2608DSTRPBF
IC DRIVER MOSFET/IGBT 8-SOIC
IRS2609DSPBF
IC DVR MOSFET/IGBT N-CH 8-SOIC
相关代理商/技术参数
IRS2332DSTRPBF
功能描述:功率驱动器IC 600V 3Phs Drvr IC w/ Intgr BSF & OperAmpl RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2332JPBF
功能描述:功率驱动器IC 3-Ph Bridge Driver 600V 200mA 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2332JTRPBF
功能描述:功率驱动器IC 600V 3Phs Drvr IC w/integr OperAmpl RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2332SPBF
功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 200mA 500ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2332STRPBF
功能描述:功率驱动器IC 600V 3Phs Drvr IC w/integr OperAmpl RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2334MPBF
功能描述:功率驱动器IC 600V 3-Phase DRVR 10V to 20V 530ns
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2334MTRPBF
功能描述:功率驱动器IC Gen5 HVIC 600V 3 Phase Gt Drvr
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2334SPBF
功能描述:功率驱动器IC 600V 3-Phase DRVR 10V to 20V 530ns
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube